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• W2078462316 abstract "Comparative analysis of optical characteristics of In0.08Ga0.92N∕In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates." @default.
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• W2078462316 date "2007-07-01" @default.
• W2078462316 modified "2023-10-10" @default.
• W2078462316 title "Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates" @default.
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• W2078462316 doi "https://doi.org/10.1063/1.2749281" @default.
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