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• W2078463351 abstract "Patterning at resolution below the diffraction limit for projection optical lithography has been demonstrated using evanescent near-field optical lithography with broadband illumination (365–600 nm). Linewidths of 50 nm and gratings with 140 nm period have been achieved. Ultrathin photoresist layers in conjunction with conformable photomasks are employed and a reactive ion etching process using SF6 has been developed to transfer the patterns to a depth of more than 100 nm into silicon. Full electromagnetic field simulations of the exposure process show that a high contrast image is present within the resist layer, and that the exposure is dominated by one polarization for the grating structures studied." @default.
• W2078463351 created "2016-06-24" @default.
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• W2078463351 date "1999-11-29" @default.
• W2078463351 modified "2023-09-25" @default.
• W2078463351 title "Sub-diffraction-limited patterning using evanescent near-field optical lithography" @default.
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• W2078463351 doi "https://doi.org/10.1063/1.125388" @default.
• W2078463351 hasPublicationYear "1999" @default.
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