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• W2078480159 endingPage "L153" @default.
• W2078480159 startingPage "L153" @default.
• W2078480159 abstract "We study the electronic structure of newly discovered MBE-grown diluted magnetic semiconductor Ga 1- x Cr x N( x = 0.0, 0.06, 0.29, 1.0) films, using X-ray absorption spectroscopy across the N 1 s and Cr 2 p edges. Angle-dependent N 1 s absorption results of pure GaN and ferromagnetic Ga 0.94 Cr 0.06 N exhibit identical behaviour of the N 2 p x , 2 p y and 2 p z states, typical of the wurtzite structure. In addition, Ga 0.94 Cr 0.06 N shows a new feature derived from N 2 p states hybridized with Cr 3 d states, within the band gap of GaN. Cr 2 p absorption spectra show spectral features consistent with tetrahedrally co-ordinated CrN 4 cluster calculations. Excess Cr-content shows up as cubic CrN impurity phase, which is confirmed by comparing experimentally with pure CrN spectral features as well as with cluster calculations in octahedral geometry. The results indicate that the new unoccupied states formed in the band gap of the Cr-substituted wurtzite GaN are important for ferromagnetism." @default.
• W2078480159 created "2016-06-24" @default.
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• W2078480159 date "2005-01-01" @default.
• W2078480159 modified "2023-09-30" @default.
• W2078480159 title "Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_1-xCr_xN Films" @default.
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• W2078480159 doi "https://doi.org/10.1143/jjap.44.l153" @default.
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