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• W2078486822 abstract "ZnO nanorods were implanted with Ga+ ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 1011to1017cm−2. Electrical resistance measurements performed on single ZnO nanorods yield first an increase of the resistance due to defect formation which lowers the electron mobility. Implantation doses exceeding 1015cm−2 yield a strong decrease of the resistance to values significantly below the resistance before Ga+-ion implantation. Low specific resistivities of about 3×10−3Ωcm are reached without additional annealing treatment after high-dose implantation." @default.
• W2078486822 created "2016-06-24" @default.
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• W2078486822 date "2007-09-24" @default.
• W2078486822 modified "2023-09-26" @default.
• W2078486822 title "Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system" @default.
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• W2078486822 doi "https://doi.org/10.1063/1.2791006" @default.
• W2078486822 hasPublicationYear "2007" @default.
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