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• W2078503344 abstract "Pure and Co-doped gallium nitride (GaN) (5 and 8 mol%) nanocrystals were synthesized by nitridation of Ga–EDTA.NH4 and Co–Ga–EDTA.NH4 complexes. Pure and 5 mol% cobalt-doped GaN did not show any impurity phases in the X-ray diffraction and Raman analysis, whereas 8 mol% Co-doped GaN show secondary phase formation. Transmission electron microscopic study revealed the broad crystal size distribution ranging from 10 to 140 nm. Cathodoluminiscence spectra measured at 20 K shows the suppression of GaN band edge emission with increasing Co concentration. Magnetic measurements of Co-doped GaN revealed a ferromagnetic behavior up to room temperature. The saturation magnetization value increases with increasing impurity phase separation. X-ray photoelectron spectroscopy revealed evidence on the oxidation states of cobalt and excludes the possibility of Co clusters in the doped samples." @default.
• W2078503344 created "2016-06-24" @default.
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• W2078503344 date "2012-01-15" @default.
• W2078503344 modified "2023-10-16" @default.
• W2078503344 title "Synthesis and characterization of pure and Co-doped gallium nitride nanocrystals" @default.
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• W2078503344 doi "https://doi.org/10.1007/s13204-011-0052-x" @default.
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