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- W2078552590 abstract "I-U characteristics measured in ${mathrm{TlGaTe}}_{2}$ single crystals consist of two regimes: a linear one at low current densities and a nonlinear one at higher current densities. In the nonlinear part [negative-differential-resistance (NDR) region] of the curves, a considerable increase of the temperature of the sample was registered. Additionally, voltage oscillations were observed in this region. Arrhenius plots (lnensuremath{sigma} vs ${10}^{3}$/${mathit{T}}_{0}$ plots) recorded in the Ohmic part of the I-U curves show a temperature dependence of the conductivity. This fact, in combination with a purely thermal mechanism, can well explain both the formation of the NDR region and the temperature elevation in this region." @default.
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- W2078552590 date "1993-02-15" @default.
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- W2078552590 title "Negative-differential-resistance effects in the<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>TlGaTe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>ternary semiconductor" @default.
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- W2078552590 doi "https://doi.org/10.1103/physrevb.47.4261" @default.
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