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• W2078554061 abstract "Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs." @default.
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• W2078554061 date "2014-11-03" @default.
• W2078554061 modified "2023-09-22" @default.
• W2078554061 title "Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma" @default.
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• W2078554061 doi "https://doi.org/10.1063/1.4901278" @default.
• W2078554061 hasPublicationYear "2014" @default.
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