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- W2078555700 abstract "Molecular dynamic simulations are performed to investigate SiF3 continuously bombarding the amorphous silicon surface with energies of 10, 25, 50 and 100 eV at normal incidence and room temperature. Saturation of the uptake of F atoms on the surface is observed. At above 10 eV, the transition from deposition to etching occurs. Accompanying the saturation of F atom deposition on the surfaces, balance between etching of Si atoms from the substrate and deposition of Si atoms from incident SiF3 is established. This behaviour is in good agreement with the experimental data. The SixFy interfacial layer through which Si atoms in the initial substrate are carried to the surface to form volatile products is formed, whose thickness increases with incident energy. The composition of the interfacial layer is discussed." @default.
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- W2078555700 date "2006-08-10" @default.
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- W2078555700 title "Atomic simulation of deposition and etching on the surface of Si bombarded by energetic SiF3" @default.
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- W2078555700 doi "https://doi.org/10.1088/0963-0252/15/4/014" @default.
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