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- W2078585711 abstract "Abstract In this paper, we review our recent investigation of the electronic transport in hydrogenated nanocrystalline silicon thin film grown on crystalline silicon substrate. The variable magnetic-field Hall measurements have been applied to extract the separated carrier information about the nc-Si:H, c-Si and their interface, where the formation of two-dimensional electron gas is clearly observed. With a decrease in the temperature, the nc-Si:H thin film shows a transition from the extended state to the band-tail state, together with a positive magneto-conductivity at extremely low temperatures. These results reveal the good uniformity of the quantum dots in the nc-Si:H thin film and the electron localization. Furthermore, we have successfully observed clear step-like and spike-like structures for the electrons resonant tunneling through the quasi-2D and 0D states in the I – V curves of the nc-Si:H/ c -Si diode under strong electric field at low temperatures." @default.
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- W2078585711 date "2005-08-01" @default.
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- W2078585711 title "Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems" @default.
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- W2078585711 doi "https://doi.org/10.1016/j.surfcoat.2004.10.057" @default.
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