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• W2078595920 abstract "We present detailed measurements of the differential resistance (dV/dI) of state-of-the-art FM/AlOx/FM magnetic tunnel junctions (MTJ) as a function of applied bias and temperature. Temperature effects are particularly significant in physical quantities involving narrow features such as those at low-voltage bias. We show that the temperature evolution of the tunneling characteristics and, in particular, the pronounced rounding of the dV/dI curves with increasing temperature can be well explained by thermal smearing of the tunneling electron energy distribution." @default.
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• W2078595920 date "2003-07-01" @default.
• W2078595920 modified "2023-10-13" @default.
• W2078595920 title "Origin of temperature dependence in tunneling magnetoresistance" @default.
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• W2078595920 doi "https://doi.org/10.1209/epl/i2003-00484-4" @default.
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