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- W2078609812 abstract "We have grown n+ -GaAs films using Sn or Ge doping on n+ -GaAs substrates by molecular beam epitaxy and studied the vertical electronic transport through the film-substrate interface. An interfacial layer with high resistance and a nonlinear I-V characteristic is observed whenever the substrates have been sputter-cleaned and annealed prior to the growth. Similar results are observed for the nonsputtered substrates with a high surface coverage of carbon. Such an interfacial layer can be eliminated in both cases by a predeposition of a Sn monolayer prior to the growth of the n+ -GaAs layers." @default.
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- W2078609812 date "1981-08-01" @default.
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- W2078609812 title "Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film‐substrate interface" @default.
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- W2078609812 doi "https://doi.org/10.1063/1.92689" @default.
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