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- W2078618616 abstract "Generic analytical expressions useful for the modeling of the MOSFET operation as a function of gate and drain biases are presented. Both, the linear and the non-ohmic regimes of operation are analyzed. Analytical expressions for the drain current, the transconductance, the output conductance, the noise spectral density, and the current fluctuation intensity are provided not only for room temperature but also for the liquid helium temperature range where a specific mobility law is required. Es werden analytische Ausdrücke angegeben, die für die Modellierung des MOSFET-Betriebs als Funktion von Gate- und Drain-Vorspannungen nützlich sind. Sowohl der lineare als auch der nicht-ohmsche Betriebsbereich werden analysiert. Analytische Ausdrücke für den Drainstrom, die Steilheit, den Ausgangsleitwert, die spektrale Rauschdichte und die Intensität der Stromfluktuationen werden nicht nur für Zimmertemperatur sondern auch für den Temperaturbereich des flüssigen Heliums angegeben, wo ein spezifisches Beweglichkeitsgesetz erforderlich ist." @default.
- W2078618616 created "2016-06-24" @default.
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- W2078618616 date "1989-05-16" @default.
- W2078618616 modified "2023-09-23" @default.
- W2078618616 title "Analytical modelling of the MOS transistor" @default.
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- W2078618616 doi "https://doi.org/10.1002/pssa.2211130127" @default.
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