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• W2078649105 abstract "Data taken with a variety of experimental techniques ranging from Auger electron spectroscopy and work function changes to synchrotron-based photoelectron spectroscopy prove that K adatoms can efficiently enhance the oxidation of GaAs in close analogy to their role in Si oxidation. Alkali-covered GaAs substrates display an enhancement in the kinetics of oxidation much larger than those previously observed in electron or laser irradiated surfaces. Complete removal of the alkali adlayer by thermal treatments has not been achieved without changing the stoichiometry of the substrate oxides, in contrast to the case of Si." @default.
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• W2078649105 date "1989-04-01" @default.
• W2078649105 modified "2023-10-17" @default.
• W2078649105 title "Enhanced oxidation of GaAs(110) by adsorbed K atoms" @default.
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• W2078649105 doi "https://doi.org/10.1016/0039-6028(89)90881-9" @default.
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