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• W2078656163 abstract "Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1−y photovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107 cm−2. H3PO4 DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105 µm2) from substrate to GaAsyP1−y device layer." @default.
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• W2078656163 date "2014-10-01" @default.
• W2078656163 modified "2023-09-27" @default.
• W2078656163 title "Defect selective etching of GaAs P1− photovoltaic materials" @default.
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• W2078656163 doi "https://doi.org/10.1016/j.jcrysgro.2014.07.005" @default.
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