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• W2078661699 abstract "Amorphous lanthanum aluminate (LAO) gate dielectric has been grown on silicon substrates by low-pressure metalorganic chemical vapor deposition. The structure, morphology, thermal stability, bandgap, and electrical properties have been characterized by various techniques. The LAO films exhibit excellent thermal stability and keep noncrystalline structure even after 900°C rapid thermal anneal. The smooth surface and larger bandgap are also confirmed. By optimizing the processing, the minimume value of equivalent oxide thickness around 0.9 nm of LAO/Si has been achieved." @default.
• W2078661699 created "2016-06-24" @default.
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• W2078661699 date "2005-12-01" @default.
• W2078661699 modified "2023-10-18" @default.
• W2078661699 title "Metalorganic Chemical Vapor Deposition of Lanthanum Aluminate Thin Films for Gate Dielectrics" @default.
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• W2078661699 doi "https://doi.org/10.1080/00150190500315558" @default.
• W2078661699 hasPublicationYear "2005" @default.
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