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- W2078723911 abstract "We have used positron annihilation spectroscopy to study vacancy type defects in strained P doped Si1−xGex layers grown on Si substrates and irradiated with 2MeV protons. The results show that the dominant defect in the SiGe layer after irradiation is the E-center, the V–P pair. When the sample is annealed at 150–175°C the dominant defect species in the SiGe layer changes into a complex consisting of a vacancy, a P dopant and a Ge atom (V–P–Ge complex). The V–P–Ge complex anneals out at 200°C. The 50°C higher annealing temperature of the V–P–Ge complex corresponds to about 0.1–0.2eV larger binding energy than that of the V–P pair." @default.
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- W2078723911 date "2003-12-01" @default.
- W2078723911 modified "2023-09-30" @default.
- W2078723911 title "Identification of vacancy phosphorus complexes in strained Si1−xGex" @default.
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- W2078723911 doi "https://doi.org/10.1016/j.physb.2003.09.112" @default.
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