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- W2078751838 abstract "Admittance spectroscopy measurement has been performed on NiO x thin films with various oxygen compositions ( x = 1.0–1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiO x films with low oxygen composition ( x ≤1.07) are 120–170 meV and lower than 2×10 19 cm -3 , respectively. The result of current–voltage measurement of Pt/NiO x /Pt structures indicated that samples with high oxygen composition ( x ≥1.10) did not show resistance switching operation, whereas samples with low oxygen composition ( x ≤1.07) did. The best oxygen composition of NiO x thin films for realizing repeatable and stable resistance switching operation turned out to be 1.07." @default.
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- W2078751838 date "2011-01-01" @default.
- W2078751838 modified "2023-09-30" @default.
- W2078751838 title "Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory" @default.
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- W2078751838 doi "https://doi.org/10.1143/jjap.50.015802" @default.
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