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• W2078780967 abstract "Six general rules are extracted from the large body of experimental and theoretical data on relaxation and reconstruction at semiconductor surfaces. They are justified on the basis of a tight-binding description of chemical bonding. Their application is detailed for the (111), (110) and (100) surfaces of covalent and compound tetrahedral semiconductors." @default.
• W2078780967 created "2016-06-24" @default.
• W2078780967 creator A5025054957 @default.
• W2078780967 date "1993-12-01" @default.
• W2078780967 modified "2023-09-25" @default.
• W2078780967 title "Basic principles governing the surface atomic structure of zinc blende semiconductors" @default.
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• W2078780967 doi "https://doi.org/10.1016/0921-5107(93)90214-8" @default.
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