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• W2078791812 abstract "Silicon nanostructures such as small clusters, superclusters, and elongated chains, with an average diameter of a few nanometers, have been synthesized by magnetron sputtering on cleaved highly oriented pyrolytic graphite (HOPG). Scanning tunneling microscopy (STM) reveals that flat, defect-poor areas of the HOPG surface are covered with almost uniformly sized silicon clusters of 0.6±0.2 nm, 5.1±1.2 nm, and 15.4±3 nm diameter. Surface regions with defects such as pits and craters, descending a few layers into the graphite surface, are sparsely covered with silicon. Most of the deposited material, with an average diameter of 2 nm, is found to be attached to the monatomic step edges forming the crater rims. A simulation of the growth process, i.e. deposition of silicon atoms onto a surface with built-in defects, and subsequent surface diffusion and aggregation of the adatoms, convincingly reproduces most of the Si nanostructures observed in the STM topographs." @default.
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• W2078791812 date "2000-06-01" @default.
• W2078791812 modified "2023-10-01" @default.
• W2078791812 title "Growth of silicon nanostructures on graphite" @default.
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• W2078791812 doi "https://doi.org/10.1016/s0039-6028(00)00426-x" @default.
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