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- W2078832771 endingPage "074006" @default.
- W2078832771 startingPage "074006" @default.
- W2078832771 abstract "Nanowires (NWs) represent a logical pathway to extreme scaling of semiconductor devices in the single-digit nanometer scale. Combined with the inherent scalability of the resistive switching memory (RRAM), where the switching region consists of a conductive filament as small as a single atom, NWs may provide an ideal approach to reduce the device area to a range not accessible to conventional lithography. This work reviews NW-based RRAM (NWRRAM) devices. The different approaches to NWRRAMs, including (i) switching in a single metal–oxide NW, (ii) switching in a heterostructured NW with a metal–oxide segment sandwiched between NW metallic electrodes and (iii) switching in a core–shell NW, are discussed. The latter approach is then presented in detail, covering the assembly issues, the robust switching and reliability characteristics, and the scaling outlook." @default.
- W2078832771 created "2016-06-24" @default.
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- W2078832771 date "2013-02-01" @default.
- W2078832771 modified "2023-09-30" @default.
- W2078832771 title "Nanowire-based resistive switching memories: devices, operation and scaling" @default.
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- W2078832771 doi "https://doi.org/10.1088/0022-3727/46/7/074006" @default.
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