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- W2078960689 abstract "In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate—drain spacing, source—gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices." @default.
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- W2078960689 date "2010-06-04" @default.
- W2078960689 modified "2023-10-16" @default.
- W2078960689 title "Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs" @default.
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- W2078960689 doi "https://doi.org/10.1088/0268-1242/25/7/075005" @default.
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