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• W2078966467 abstract "We report uniaxial tensile strains up to 5.7% along 〈100〉 in suspended germanium (Ge) wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to make Ge a direct bandgap semiconductor. Theoretical calculations show that a significant fraction of electrons remain in the indirect conduction valley despite the direct bandgap due to the much larger density of states; however, recombination can nevertheless be dominated by radiative direct bandgap transitions if defects are minimized. We then calculate the theoretical efficiency of direct bandgap Ge LEDs and lasers. These strained Ge wires represent a direct bandgap Group IV semiconductor integrated directly on a silicon platform." @default.
• W2078966467 created "2016-06-24" @default.
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• W2078966467 date "2014-04-11" @default.
• W2078966467 modified "2023-10-09" @default.
• W2078966467 title "Direct bandgap germanium-on-silicon inferred from 57% 〈100〉 uniaxial tensile strain [Invited]" @default.
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• W2078966467 doi "https://doi.org/10.1364/prj.2.0000a8" @default.
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