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- W2078989223 abstract "Zinc oxide (ZnO) attracts many attentions for its superior properties in optics and electronics, such as wide bandgap, adjustable electronics property by doping different dopants, miscellaneous fabrication methods etc. Among all possible methods, deriving ZnO transistor from sol-gel precursor shows its application potential for high throughput, low cost, and easy to handle. The sol-gel derived devices may have a shortage on performance. To solve, modified device structure can be introduced to improve the performances of the devices derived from sol-gel method. In this study, we present a sol-gel derived ZnO thin film transistor (TFT) composing of a multichannel structure with high carrier mobility and high onoff ratio. The structure is Si bottom oxide gate ZnO active layer metal electrode. The transparency of the deposited ZnO film can be improved by increasing the annealing temperature and coating times. The crystallinity of the deposited ZnO film is increasing as well as the number of coating time and heat treatment temperature is increased, as shown in Figure 1. Figure 1(a) is the XRD result for one deposition time samples annealing at different temperature. As shown, even after annealing at 450C, the prefer orientation of the ZnO film is still not obviously. In contrast, the ZnO film with three times coating becomes highly orientated after annealing at 450C as indicated in Figure 1(b). Figure 2 compares the device performances with and without multi-channel structure. The device with multichannel structure shows better performance than that without multi-channel one. The multi-channeled ZnO TFT shows high on-off ratio (in the order of 6) and enough carrier mobility (in the order of 1). The primary result indicates the great potential to fabricate a high performance multi-channeled ZnO TFT via sol-gel method. 20 30 40 50 60 70 80 (201) (103) (110) (112) (102) (101) (002) (100)" @default.
- W2078989223 created "2016-06-24" @default.
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- W2078989223 date "2013-03-15" @default.
- W2078989223 modified "2023-09-27" @default.
- W2078989223 title "Fabricating Multiple Channeled Zinc Oxide Thin Film Transistor Via Sol-Gel Method" @default.
- W2078989223 doi "https://doi.org/10.1149/05008.0107ecst" @default.
- W2078989223 hasPublicationYear "2013" @default.
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