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- W2078995086 abstract "By using photoluminescence microscopy we have observed at room temperature the various defects in the InP substrates such as scratches, single dislocations, inclusion-like defects (ILDs) and so on. By cooling down the samples below 100 K, the luminescence intensity could be increased by about 10 times for GaInAs epilayers grown by MOVPE, thus the detection of photoluminescence from GaInAs/InP heterostructures was possible. It has been found that the core of ILDs in the InP substrates is related to a bright center in the luminescence and these ILDs do not introduce any morphological imperfection on the epilayer surface. In lattice mismatched GaInAs epitaxial layers cracks could be detected which were generated after the growth process locally and randomly, mainly along the [11̄0] direction." @default.
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- W2078995086 date "1989-10-01" @default.
- W2078995086 modified "2023-09-27" @default.
- W2078995086 title "Photoluminescence microscopy on InP substrates and GaInAs epilayers grown by MOVPE" @default.
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- W2078995086 doi "https://doi.org/10.1016/0022-0248(89)90553-8" @default.
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