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- W2079002019 abstract "Abstract GaAs/InAs superlattices with a period of 8 molecular layers were grown by molecular beam epitaxy on InP substrates. Doping of the GaAs layers and InAs layers with carbon (C) results in p-type and n-type conductivity of the superlattices, respectively. At free carrier concentrations of 1016 cm-3, the carrier mobilities are 200 and 2300 cm2/V·s for p-type and n-type conductivity, respectively. Rectifying pn-junction characteristics are demonstrated for the Ga0.47In0.53As superlattices using C as the sole impurity species." @default.
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- W2079002019 date "1993-02-01" @default.
- W2079002019 modified "2023-09-27" @default.
- W2079002019 title "Selective n- and p-type C-doping in Ga0.47In0.53As superlattices" @default.
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- W2079002019 doi "https://doi.org/10.1016/0022-0248(93)90786-v" @default.
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