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- W2079019295 abstract "A 1 μm thick n-type GaAs layer with Si doping density of 1×1017/cm3 and a 1000 Å thick undoped AlAs layer was subsequently grown by molecular beam epitaxy on the n+ GaAs substrate. To perform selective oxidation of the AlAs layer, the wafer was oxidized in N2 bubbled H2O vapor ambient at 370 °C, 400 °C, and 430 °C, each for 3 hours. It is found that the defect-free selective oxidation of AlAs is very critically dependent on oxidation temperature. Both GaAs and AlAs layers were oxidized at the oxidation temperature of 430 °C, and some defects were found by scanning electron microscopy (SEM) on the surface oxidized at 370 °C. Oxidation was, however, stopped at the AlAs/GaAs interface at the oxidation temperature of 400 °C, and no defects were found on the surface. By the slow ramp rate (5 mV/sec) high frequency (100 kHz) C-V measurement, the fixed charge density was estimated to be about 1×1011/cm2 for the metal-oxide-semiconductor (MOS) capacitor fabricated from the oxidized sample at 400 °C." @default.
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- W2079019295 date "1994-11-21" @default.
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- W2079019295 title "Wet oxidation of AlAs grown by molecular beam epitaxy" @default.
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- W2079019295 doi "https://doi.org/10.1063/1.112545" @default.
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