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• W2079021454 abstract "The Li-doped Ni–Si–O thin films (LixNi0.90−xSi0.10O, x=0.0–0.05) have been prepared by a sol-gel spin-coating method on silicon and quartz glass substrates. Analysis of phase composition and microstructure indicates that the films consist of cubic NiO phase and amorphous phase as annealed at 700°C for 5min. With the Li-doping concentration increasing, the core-level photoemission spectra show that a loss of the double-peak structure of the Ni 2p3∕2 main line can be observed and current density of the films increases greatly, which should be ascribed to the increase of the hole carriers induced by the Li doping. Ultraviolet-visible absorption spectra indicate that the absorption edge of the films exhibits a redshift due to the related defects." @default.
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• W2079021454 date "2006-08-15" @default.
• W2079021454 modified "2023-10-17" @default.
• W2079021454 title "Electrical and optical properties of Li-doped Ni–Si–O thin films" @default.
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• W2079021454 doi "https://doi.org/10.1063/1.2335602" @default.
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