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• W2079047554 abstract "This paper analyzes the impact of femtosecond laser pulse irradiation on the crystallinity of silicon wafers by means of electron backscatter diffraction (EBSD) measurements. EBSD based image quality maps and orientation imaging microscopy maps are correlated to the grade of the silicon crystallinity. We analyze the impact of accumulated net laser irradiation originating from a laser spot overlap that is necessary to process macroscopic areas, e.g., for sulfur doping of semiconductor devices. Furthermore, we demonstrate that post processing annealing recovers crystallinity and therefore allows fs-laser processed silicon to be used in semiconductor device manufacturing." @default.
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• W2079047554 date "2012-09-10" @default.
• W2079047554 modified "2023-10-18" @default.
• W2079047554 title "Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon" @default.
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• W2079047554 doi "https://doi.org/10.1063/1.4752454" @default.
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