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• W2079062293 endingPage "664" @default.
• W2079062293 startingPage "656" @default.
• W2079062293 abstract "Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si nanowires grown by chemical vapor deposition (CVD) at reduced pressure from SiCl4 precursor. Tapering of SiNWs is governed by the interplay between the catalyzed vapor−liquid−solid (VLS) and uncatalyzed vapor−solid (VS) growth mechanisms. We found that the uncatalyzed Si deposition on NW sidewalls, defined by a radial growth rate, can be enhanced by lowering SiCl4/H2 molar ratio, applying higher gas flow rate, or reducing growth pressure. Distinct dependences of the axial and radial growth rates on the process conditions were employed to produce SiNWs with a tapering degree (i.e., a ratio of the radial/axial growth rates) varying by almost 2 orders of magnitude. The results are explained by an interplay between the thermodynamic and kinetic effects on the axial (VLS) and radial (VS) growth rates. Established correlation between the SiCl4/H2 molar ratio and vertical alignment of nanowires was used to develop a two-stage growth procedure for producing tapered SiNW arrays with a predominantly vertical orientation." @default.
• W2079062293 created "2016-06-24" @default.
• W2079062293 creator A5016264159 @default.
• W2079062293 creator A5041024704 @default.
• W2079062293 creator A5091851475 @default.
• W2079062293 date "2010-12-15" @default.
• W2079062293 modified "2023-09-26" @default.
• W2079062293 title "Tapering Control of Si Nanowires Grown from SiCl₄ at Reduced Pressure" @default.
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• W2079062293 doi "https://doi.org/10.1021/nn102556s" @default.
• W2079062293 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/21158417" @default.
• W2079062293 hasPublicationYear "2010" @default.
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