FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2079069264> ?p ?o ?g. }

• W2079069264 endingPage "165" @default.
• W2079069264 startingPage "154" @default.
• W2079069264 abstract "High depth resolution medium energy ion scattering (MEIS) in the double alignment mode has been used to determine the pre- and post-annealing damage distributions following 0.1–2.5 keV B+ implantation into Si(1 0 0) at different substrate temperatures. Samples were irradiated to doses ranging from 1×1014 to 2×1016cm−2 at substrate temperatures of −150°C, 25°C and 300°C. Rapid thermal processing (RTP) was carried out to temperatures ranging from 400°C to 1000°C for 10 s, to monitor the annealing of damage caused by the B+ implant. For the room temperature (RT) implants, two distinct damage distributions were observed. The first was a narrow, near-surface damage peak which grows out from the virgin Si surface peak to a maximum depth of 3 nm, much shallower than the TRIM predicted mean projected range of e.g. 1 keV B+ ions (Rp≈5.3 nm). The width of this damage layer showed only a weak dependence on the B+ ion energy and strong dependence on the dose. The number of displaced atoms in this layer for dilute damage conditions is in good agreement with modified Kinchin Pease predictions. For 1 keV B+, a second, deeper damage peak appeared only after a B dose of 1×1015cm−2, having a maximum at a depth of ≈7.5 nm, well beyond the Rp of 5.3 nm. MEIS showed that this post-implant damage structure which develops for irradiations performed at 25°C and 300°C, is the result of dynamic annealing processes that are highly effective in the region in between the two peaks, in which Frenkel defects have their maximum production rates. The observed growth of the surface damage layer with implant dose is ascribed to the migration of point defects, created along the bombardment cascade, to the Si/SiO2 interface. For 500 eV B+ implants, due to proximity of this surface sink, the residual damage is greater even at 300°C. Implantations at −120°C resulted in a single, heavily damaged layer stretching from the surface to the position of the deep damage. These damage profiles show a direct correlation between the displaced Si and the implanted B distributions. MEIS yields approached random level, showing near or total amorphisation of the Si lattice; epitaxial regrowth, even after 30 s RTP at 600°, was however only partial, apparently arrested at B containing I clusters formed near Rp of the B distribution. RTP at 400°C and 500°C of the samples implanted at room temperature leads to substantial reduction in the Si damage, especially in the width of the near-surface peak. It suggests a substantial rearrangement of Si atoms in the lattice that occurs without the release of Si interstitials, in view of the absence of TED at these temperatures and may involve a degree of realignment of the damage structure with the channelling direction. The annealing behaviour measured by MEIS at higher temperatures is consistent with XTEM observations, showing the formation and growth in size of extended interstitial defects and their ultimate dissolution at high temperature. As well as moving into the bulk where they cause TED, a fraction of the released interstitials migrate to the surface and increase the width of the surface damage region. MEIS studies also indicates the occurrence of reverse annealing for high temperature implant conditions." @default.
• W2079069264 created "2016-06-24" @default.
• W2079069264 creator A5005096832 @default.
• W2079069264 creator A5018769512 @default.
• W2079069264 creator A5038018657 @default.
• W2079069264 creator A5039728613 @default.
• W2079069264 creator A5044664775 @default.
• W2079069264 creator A5056527039 @default.
• W2079069264 creator A5075084445 @default.
• W2079069264 date "2001-07-01" @default.
• W2079069264 modified "2023-09-27" @default.
• W2079069264 title "Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si" @default.
• W2079069264 cites W1963549980 @default.
• W2079069264 cites W1967449629 @default.
• W2079069264 cites W1972265634 @default.
• W2079069264 cites W1978416515 @default.
• W2079069264 cites W1981545888 @default.
• W2079069264 cites W1983910633 @default.
• W2079069264 cites W1997804345 @default.
• W2079069264 cites W2000336171 @default.
• W2079069264 cites W2005288023 @default.
• W2079069264 cites W2005958227 @default.
• W2079069264 cites W2007241394 @default.
• W2079069264 cites W2010079541 @default.
• W2079069264 cites W2016793838 @default.
• W2079069264 cites W2019976417 @default.
• W2079069264 cites W2024172140 @default.
• W2079069264 cites W2048306058 @default.
• W2079069264 cites W2055084674 @default.
• W2079069264 cites W2065801286 @default.
• W2079069264 cites W2066865940 @default.
• W2079069264 cites W2069144385 @default.
• W2079069264 cites W2078568445 @default.
• W2079069264 cites W2079622029 @default.
• W2079069264 cites W2081416034 @default.
• W2079069264 cites W2082772983 @default.
• W2079069264 cites W2086796407 @default.
• W2079069264 cites W2096236338 @default.
• W2079069264 cites W2129951600 @default.
• W2079069264 cites W4247673670 @default.
• W2079069264 doi "https://doi.org/10.1016/s0168-583x(00)00683-2" @default.
• W2079069264 hasPublicationYear "2001" @default.
• W2079069264 type Work @default.
• W2079069264 sameAs 2079069264 @default.
• W2079069264 citedByCount "27" @default.
• W2079069264 countsByYear W20790692642013 @default.
• W2079069264 countsByYear W20790692642016 @default.
• W2079069264 countsByYear W20790692642017 @default.
• W2079069264 countsByYear W20790692642019 @default.
• W2079069264 crossrefType "journal-article" @default.
• W2079069264 hasAuthorship W2079069264A5005096832 @default.
• W2079069264 hasAuthorship W2079069264A5018769512 @default.
• W2079069264 hasAuthorship W2079069264A5038018657 @default.
• W2079069264 hasAuthorship W2079069264A5039728613 @default.
• W2079069264 hasAuthorship W2079069264A5044664775 @default.
• W2079069264 hasAuthorship W2079069264A5056527039 @default.
• W2079069264 hasAuthorship W2079069264A5075084445 @default.
• W2079069264 hasConcept C111337013 @default.
• W2079069264 hasConcept C113196181 @default.
• W2079069264 hasConcept C120665830 @default.
• W2079069264 hasConcept C121332964 @default.
• W2079069264 hasConcept C145148216 @default.
• W2079069264 hasConcept C153428861 @default.
• W2079069264 hasConcept C159985019 @default.
• W2079069264 hasConcept C178790620 @default.
• W2079069264 hasConcept C184779094 @default.
• W2079069264 hasConcept C185544564 @default.
• W2079069264 hasConcept C185592680 @default.
• W2079069264 hasConcept C191486275 @default.
• W2079069264 hasConcept C192562407 @default.
• W2079069264 hasConcept C2777855556 @default.
• W2079069264 hasConcept C41823505 @default.
• W2079069264 hasConcept C41999313 @default.
• W2079069264 hasConcept C43617362 @default.
• W2079069264 hasConcept C49040817 @default.
• W2079069264 hasConcept C544956773 @default.
• W2079069264 hasConceptScore W2079069264C111337013 @default.
• W2079069264 hasConceptScore W2079069264C113196181 @default.
• W2079069264 hasConceptScore W2079069264C120665830 @default.
• W2079069264 hasConceptScore W2079069264C121332964 @default.
• W2079069264 hasConceptScore W2079069264C145148216 @default.
• W2079069264 hasConceptScore W2079069264C153428861 @default.
• W2079069264 hasConceptScore W2079069264C159985019 @default.
• W2079069264 hasConceptScore W2079069264C178790620 @default.
• W2079069264 hasConceptScore W2079069264C184779094 @default.
• W2079069264 hasConceptScore W2079069264C185544564 @default.
• W2079069264 hasConceptScore W2079069264C185592680 @default.
• W2079069264 hasConceptScore W2079069264C191486275 @default.
• W2079069264 hasConceptScore W2079069264C192562407 @default.
• W2079069264 hasConceptScore W2079069264C2777855556 @default.
• W2079069264 hasConceptScore W2079069264C41823505 @default.
• W2079069264 hasConceptScore W2079069264C41999313 @default.
• W2079069264 hasConceptScore W2079069264C43617362 @default.
• W2079069264 hasConceptScore W2079069264C49040817 @default.
• W2079069264 hasConceptScore W2079069264C544956773 @default.
• W2079069264 hasIssue "1-2" @default.
• W2079069264 hasLocation W20790692641 @default.
• W2079069264 hasOpenAccess W2079069264 @default.

• next