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- W2079071512 abstract "A high energy electron diffraction system is described which is especially designed for in situ studies of the growth, structure and orientation of thin films formed by cathodic sputtering or vacuum deposition. The epitaxial growth of indium antimonide by sputtering on cleaved (001) faces of rocksalt has been studied in situ by the use of this system. An amorphous film is formed at room temperature but it transforms into a crystalline structure at about 150°C. The degree of orientation in the crystalline film increases as depositions are made at increasingly higher substrate temperatures. Complete epitaxy is obtained at and above 250°C. It is observed that the epitaxial growth of indium antimonide is always preceded by the formation of a very thin layer of indium during the earliest observable film growth. The indium is tetragonal, growing epitaxially onto the rocksalt substrate even at room temperature. A parallel epitaxial relationship between indium antimonide and rocksalt develops, accompanied by 〈111〉 twinning which increases with increasing film thickness. The diffraction studies confirm the occurrence of a hexagonal polymorph of indium antimonide during the initial stage of film growth." @default.
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- W2079071512 date "1968-01-01" @default.
- W2079071512 modified "2023-09-25" @default.
- W2079071512 title "Epitaxial growth of indium antimonide films as studied in situ by electron diffraction" @default.
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- W2079071512 doi "https://doi.org/10.1016/0039-6028(68)90180-5" @default.
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