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• W2079076053 abstract "For making porous silicon devices, it is important to study the overall effect of important processing steps on this material. This paper deals with the most important steps required for fabricating discrete devices and also for integration with silicon integrated circuits. A p-n junction has been formed in porous silicon by diffusion at high temperatures and it has reduced the resistance of the material. A new technique has been developed, which is known as waxolithography, for making small structures in this material. The metallic structure has also been optimized for good ohmic contact. Optical properties of porous silicon are also discussed." @default.
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• W2079076053 date "1995-05-01" @default.
• W2079076053 modified "2023-09-24" @default.
• W2079076053 title "Technologies for porous silicon devices" @default.
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• W2079076053 doi "https://doi.org/10.1088/0268-1242/10/5/022" @default.
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