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• W2079087625 abstract "Silicon oxide (SiOx) layers were deposited on silicon and plastic substrates at a low substrate temperature of 100 °C by remote plasma-enhanced chemical deposition (RPE-CVD) using a combination of SiH4/N2 gases in N2O/Ar remote plasma. The deposition rate of the SiOx layers initially increased with increasing N2O/SiH4 flow ratio of 10 and then decreased with further increases. Under the current experimental conditions, gas-phase reactions leading to powder formation were minimized by increasing the N2O/SiH4 flow ratio at the reduced SiH4 flow rate of 10 sccm. The silicon oxide thin films became Si-rich with increasing N2O/SiH4 flow ratio. The leakage current of the SiOx layer was higher at the lower N2O/SiH4 flow ratio, which was attributed to the increased rate of gas-phase reactions leading to a film with a less dense structure." @default.
• W2079087625 created "2016-06-24" @default.
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• W2079087625 date "2007-02-01" @default.
• W2079087625 modified "2023-09-27" @default.
• W2079087625 title "Effect of N2O/SiH4 flow ratio on properties of SiOx thin films deposited by low-temperature remote plasma-enhanced chemical deposition" @default.
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• W2079087625 doi "https://doi.org/10.1016/j.surfcoat.2006.07.035" @default.
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