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- W2079102551 abstract "We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (λ=1.3 µm) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10 14 cm -3 for typical commercial wafers 350 µm in thickness." @default.
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- W2079102551 date "1991-07-01" @default.
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- W2079102551 title "Near-Infrared Transmission Measurement of EL2 Concentration in Semi-Insulating GaAs Wafers with a Laser Diode (λ=1.3 µm)" @default.
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- W2079102551 doi "https://doi.org/10.1143/jjap.30.1430" @default.
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