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• W2079103209 abstract "A nonvolatile write-once-read-many-times (WORM) memory device based on poly((4-vinylbenzyl)-9H-carbazole) (PVCz) was fabricated by a simple and conventional process. The as-fabricated device was found to be at its OFF state and could be programmed irreversibly to the ON state with a low transition voltage of −1.7 V. The device exhibits a high ON/OFF current ratio of up to 106, high stability in retention time up to 8 h and number of read cycles up to 108 under a read voltage of −1.0 V in both ON and OFF states. The results of X-ray diffraction (XRD) and fluorescence emission spectra in different states of PVCz indicate that the electrical bistable phenomenon is caused by the voltage-induced conformation change of the pendant carbazole groups. With high performance, low power consumption and low production cost, the device fabricated with PVCz has a potential application for nonvolatile memory." @default.
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• W2079103209 date "2010-10-01" @default.
• W2079103209 modified "2023-10-04" @default.
• W2079103209 title "WORM memory devices based on conformation change of a PVK derivative with a rigid spacer in side chain" @default.
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• W2079103209 doi "https://doi.org/10.1016/j.matchemphys.2010.05.037" @default.
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