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• W2079103739 abstract "Kesterites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I2–II–IV–VI4 nanocrystal of Cu2ZnSnS4 is a chalcopyrite material with a near-optimum band gap of ∼1.5 eV. Semiconductor Cu2ZnSnS4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu2ZnSnS4 solar cell under AM1.5G are as follows: open circuit voltage of 319 mV, short-circuit current of 25.5 mA/cm2, fill factor of 25, and a power conversion efficiency of 2.03%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu2ZnSnS4 nanorods is proposed." @default.
• W2079103739 created "2016-06-24" @default.
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• W2079103739 date "2013-01-01" @default.
• W2079103739 modified "2023-10-18" @default.
• W2079103739 title "Quaternary semiconductor derived and formation mechanism by non-vacuum route from solvothermal nanostructures for high-performance application" @default.
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• W2079103739 doi "https://doi.org/10.1016/j.matlet.2012.10.037" @default.
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