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• W2079106602 abstract "We present a technology development methodology that relies on 3D virtual fabrication to rapidly improve yield by increasing tolerance to multilevel process variation. This methodology has been successfully implemented in the development and yield ramp of high-performance 22nm SOI CMOS technology. Based on virtual metrology, dedicated testsite structures were designed and implemented, with electrical results corroborating virtual findings, validating the methodology. This 3D virtual fabrication technique was used to implement a delicate process change, and the same testsite structures validated the improved process window yield." @default.
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• W2079106602 date "2013-09-01" @default.
• W2079106602 modified "2023-09-27" @default.
• W2079106602 title "22nm technology yield optimization using multivariate 3D virtual fabrication" @default.
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• W2079106602 doi "https://doi.org/10.1109/sispad.2013.6650583" @default.
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