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- W2079117951 abstract "We present a numerical simulation and physical analysis of how a single dopant in the channel region effects the variation of threshold voltage Δ V th in highly scaled (gate length = 16 nm) and undoped double-gate fin field effect transistors. The presence of a single contaminant dopant in an undoped channel with an abrupt source/drain (S/D) doping gradient can cause a severe change in Δ V th (140 mV owing to a single acceptor; 100 mV owing to a single donor). To effectively suppress this severe variation, we suggest S/D doping gradient engineering to make the lateral straggle of S/D doping (σ S/D ) larger than 2 nm to minimize Δ V th . The distribution of V th is also estimated by three-dimensional simulation using the position of the dopant." @default.
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- W2079117951 date "2010-10-01" @default.
- W2079117951 modified "2023-09-26" @default.
- W2079117951 title "Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random Doping" @default.
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