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- W2079118575 abstract "MBE grown epitaxial films of CaF2 onto Si(111) substrates were investigated by gamma ray diffraction to obtain assertions about the real structure and the strain situation in the epitaxial systems. It were measured the integral reflection coefficient Ri and the angle distribution of the reflected intensity of both (111) and (333) reflections. It was found that (i) a high temperature annealing step during the wafer preparation (1200 °C) causes a drastical increase of real structure defects in the substrate material, (ii) expitaxial layers of 18 nm thickness are grown pseudomorphically, layers having a thickness of 30 nm are relaxed, (iii) the misfit dislocation network formed during the relaxation process is localized not in the deposit but in the substrate material.Mittels Beugung von Gamma-Strahlen wurden epitaktische CaF2-Schichten auf (111)-orientierten Si-Substraten untersucht, um Aussagen zur Realstruktur und zur Verzerrung im epitaktischen System zu erhalten. Hierzu wurden der integrale Reflexionskoeffizient Ri und die Winkelabhangigkeit der Streuintensitat sowohl fur den (111)- als auch fur den (333)-Reflex aufgenommen. Es wurde gefunden, das (a) ein Hochtemperaturschritt wahrend der Substratpraparation (1200 °C) die Realstrukturdefektdichte drastisch erhoht, (b) epitaktische Schichten mit einer Dicke von 18 nm pseudomorph verwachsen und solche mit einer Schichtdicke von 30 nm relaxiert sind und (c) das Anpassungsversetzungsnetzwerk, welches sich wahrend des Relaxationsprozesses ausbildet, nicht im Depositen, sondern im Substratmaterial lokalisiert ist." @default.
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- W2079118575 date "1992-01-01" @default.
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- W2079118575 title "A Gamma-ray Diffraction Study of MBE-Grown CaF2/Si(111) Heterostructures" @default.
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- W2079118575 doi "https://doi.org/10.1002/crat.2170270609" @default.
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