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• W2079132272 abstract "We report the application of biased high-density-plasma-chemical-vapor-deposited (HDP-CVD) SiOF films to multilevel metallization technology. We discuss the reason for the SiOF film's low dielectric constant and illustrate the optimal deposition conditions. The fluorine concentration in the HDP-CVD SiOF film can affect the gap filling characteristics. We observed that the dielectric constant of this SiOF film is 3.7 for a fluorine concentration of 7.3 at.%. This film was successfully applied to intermetal dielectrics and the parasitic capacitance was 13% lower than that of a SiO 2 film." @default.
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• W2079132272 date "2000-03-01" @default.
• W2079132272 modified "2023-10-03" @default.
• W2079132272 title "Stability and Application to Multilevel Metallization of Fluorine-Doped Silicon Oxide by High-Density Plasma Chemical Vapor Deposition" @default.
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• W2079132272 doi "https://doi.org/10.1143/jjap.39.1091" @default.
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