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- W2079172872 abstract "We have measured, separately, the width of the tail states of the conduction band and of the valence band in amorphous silicon, by `photomodulated infrared absorption'. In this technique, we populate the tail states of the amorphous materials by irradiation of visible or near-UV light, and observe the resulting increase of infrared absorption. The method is made very sensitive by using a modulation of the irradiation light and a lock-in detection of the IR absorption. We have developed a model that describes the infrared absorption of the photocarriers. For n-type material, the measured signal corresponds to optical transitions from the populated tail states of the conduction band to higher conduction band states, allowing for a determination of the width of the tail of the conduction band. Similarly p-type material allows for valence-band tail probing. A value of 28 meV for the width of the conduction band tail in a-Si:H (to be compared to the value of 55 meV for the Urbach edge) is deduced from our results." @default.
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- W2079172872 date "2002-04-01" @default.
- W2079172872 modified "2023-09-25" @default.
- W2079172872 title "Measurement of band tail widths in hydrogenated amorphous silicon" @default.
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- W2079172872 doi "https://doi.org/10.1016/s0022-3093(01)01024-9" @default.
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