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- W2079184746 abstract "A novel manufacturable multiple gate oxynitride thickness technology is proposed in this work. An ultrathin dielectric film ( E OT =2.5 nm) of lower oxidation growth rate than conventional films was fabricated by NH 3 plasma nitridation. Oxide thickness was reduced by about 80% for samples treated by NH 3 plasma nitridation. However, the thickness limitation is 1.3 nm for NH 3 plasma nitridation. This is believed to be due to nitrogen incorporated in the silicon surface to form a nitridelike thin film, which retarded oxide growth. The effects of NH 3 plasma nitridation were systematically studied, and the rapid thermal N 2 O reoxidation of an NH 3 plasma sample was also demonstrated in this work. This novel process improves the gate oxide reliability, decreases bulk trap densities, provides better SILC immunity, and produces less charge trapping and a higher Q bd ." @default.
- W2079184746 created "2016-06-24" @default.
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- W2079184746 date "2005-08-01" @default.
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- W2079184746 title "Reoxidation after NH<sub>3</sub> Plasma Nitridation for Multiple-Thickness Oxynitrides" @default.
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- W2079184746 doi "https://doi.org/10.1143/jjap.44.5964" @default.
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