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- W2079185511 abstract "We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V." @default.
- W2079185511 created "2016-06-24" @default.
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- W2079185511 date "2015-01-06" @default.
- W2079185511 modified "2023-10-11" @default.
- W2079185511 title "Si/Ge hetero-structure nanotube tunnel field effect transistor" @default.
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- W2079185511 doi "https://doi.org/10.1063/1.4905423" @default.
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