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- W2079221224 abstract "A new, Ti-based salicide process is presented using an RF-sputter technique and conventional furnace annealing. Ohmic contacts have been made to n- and p-type silicon and to p-type SiGe resulting in specific contact resistances of 9.3 × 10-8 and 3.6 × 10-8 Ω·cm2 for n- and p-type Si, and 4.5 × 10-8 Ω·cm2 for p-type SiGe, respectively. The salicidation was applied to emitter and base contacts of an integrated, selfaligned Si/SiGe-heterojunction bipolar transistor fabricated with a 1.5 µm technology. The maximum post-epitaxial processing temperature could be limited to 650°C. The transistor is marked by a clear emitter-base heterojunction due to a constant Ge fraction of 28% in the base layer. High-frequency measurements resulted in fT = 65 GHz (VCE = 1 V)." @default.
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- W2079221224 date "1994-09-01" @default.
- W2079221224 modified "2023-09-25" @default.
- W2079221224 title "Low thermal budget titanium-based salicide contacts and their application to 65 GHz fT Si/SiGe-HBT technology" @default.
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- W2079221224 doi "https://doi.org/10.1049/el:19941007" @default.
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