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- W2079223546 abstract "This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the research in non-classical architecture. The present status of extended planar silicon devices, including the insertion of high-k dielectric, metal gate and SOI MOSFET in the recent manufacturing process is elaborated. The alternative path in the enhancement of IC device performance, merely in the sub-50nm dimension is shown, with the role of double gate MOSFET and non-planar structure devices, including vertical FETs, is expected to take greater share, as well as several emerging nanostructures. The possibility to implement the non-planar devices generation heavily depends on the maturity of each technology and the ability to clear the obstacles in processing." @default.
- W2079223546 created "2016-06-24" @default.
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- W2079223546 date "2010-09-01" @default.
- W2079223546 modified "2023-09-25" @default.
- W2079223546 title "The Future of Non-planar Nanoelectronics MOSFET Devices: A Review" @default.
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- W2079223546 doi "https://doi.org/10.3923/jas.2010.2136.2146" @default.
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