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- W2079227588 abstract "As-grown ZnO typically exhibits n-type conductivity and the difficulty of synthesizing p-type ZnO for the realization of ZnO-based optoelectronic devices is mainly due to the compensation effect of a large background n-type carrier concentration. The cause of this self-compensation effect has not been conclusively identified although oxygen vacancies, zinc interstitials and hydrogen have been suggested. In this work, typical n-type ZnO thin films were prepared by sputtering and investigated using X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy to gain an insight on the possible cause of the self-compensation effect. The analyses found that the native defect that most likely behaved as the donor was zinc interstitial but some contribution of n-type conductivity could also come from the electronegative carbonates or hydrogen carbonates incorporated in the ZnO thin films." @default.
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- W2079227588 date "2007-01-01" @default.
- W2079227588 modified "2023-10-16" @default.
- W2079227588 title "Self-compensation in ZnO thin films: An insight from X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy analyses" @default.
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- W2079227588 doi "https://doi.org/10.1016/j.tsf.2006.08.047" @default.
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