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- W2079230042 abstract "Abstract The metal/silicon system Al/Si(111)‐7 × 7 was studied by our group with spot‐profile analysis low‐energy electron diffraction (SPA‐LEED), reflection high‐energy electron diffraction (RHEED) and scanning force microscopy (SFM), with emphasis on temperature‐dependent order–disorder phase transitions of the surface structures. A review of the Al/Si(111) system describes our results in context with the findings of others. An improved phase formation diagram, including earlier results, is deduced. Between the submonolayer phases and the thick films a cluster phase (the δ‐phase) was found that exists in a coverage range of 1–10 monolayers, showing intriguing temperature‐dependent effects. At coverages above 20 monolayers the behaviour changes to that of thick films. Although the Al/Si(100) system has completely different reconstructions below one monolayer, the same δ‐phase as on Si(111) appears at one monolayer, with similar thermal behaviour. Copyright © 2001 John Wiley & Sons, Ltd." @default.
- W2079230042 created "2016-06-24" @default.
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- W2079230042 date "2001-08-01" @default.
- W2079230042 modified "2023-10-16" @default.
- W2079230042 title "Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions" @default.
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- W2079230042 doi "https://doi.org/10.1002/sia.1027" @default.
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