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- W2079239672 abstract "Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> ≤ N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</inf> ≤ cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> . It is anticipated that this empirical fit will be valuable in device modeling." @default.
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- W2079239672 date "1984-07-01" @default.
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- W2079239672 title "An empirical fit to minority hole mobilities" @default.
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- W2079239672 doi "https://doi.org/10.1109/edl.1984.25900" @default.
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