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• W2079248540 abstract "This article presents an etching process to fabricate a high-quality vertical facet for the photonic quantum ring (PQR) laser. The presented process uses the chemically assisted ion beam etching (CAIBE) method with a gas mixture of Ar:Cl2:BCl3=5:2:3 sccm, and uses a single-layer photoresist etch mask to reduce the process complexity of etching GaAs/AlGaAs structures for the PQR laser. The angle θ between the incident beam and the normal direction of the substrate has been adjusted to achieve a high-quality vertical facet. Distortions on the mask pattern are not transferred to the etched side wall for θ⩾25°, and a vertical facet is obtained at θ∼25°. The fabricated PQR lasers with the CAIBE process in this article show a sharp linewidth of ∼0.06 nm." @default.
• W2079248540 created "2016-06-24" @default.
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• W2079248540 date "2001-07-01" @default.
• W2079248540 modified "2023-09-27" @default.
• W2079248540 title "Fabrication of photonic quantum ring laser using chemically assisted ion beam etching" @default.
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• W2079248540 doi "https://doi.org/10.1116/1.1382872" @default.
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