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• W2079266962 startingPage "2380" @default.
• W2079266962 abstract "a-Si:H films were deposited by direct photochemical vapor deposition using vacuum ultraviolet lights emitted from deuterium (161 nm) and Xe (147 nm) discharge lamps. A source gas of Si2H6 was effectively decomposed, and a high deposition rate of 7.5 nm/min could be achieved in the case of the Xe lamp. The films had excellent electrical and photoelectric properties similar to ordinary films deposited by glow discharge, and showed very little degradation of photoconductivity under illumination." @default.
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• W2079266962 date "1988-09-01" @default.
• W2079266962 modified "2023-10-03" @default.
• W2079266962 title "Deposition of high‐quality <i>a</i>‐Si:H by direct photodecomposition of Si₂H₆ using vacuum ultraviolet light" @default.
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• W2079266962 doi "https://doi.org/10.1063/1.342498" @default.
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